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dc.contributor.authorQuirce Teja, Ana
dc.contributor.authorValle Gutiérrez, Ángel 
dc.contributor.authorPesquera Gonzalez, Luis
dc.contributor.authorThienpont, Hugo
dc.contributor.authorPanajotov, Krassimir
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2025-01-09T14:44:22Z
dc.date.available2025-01-09T14:44:22Z
dc.date.issued2015-11
dc.identifier.issn1077-260X
dc.identifier.issn1558-4542
dc.identifier.otherTEC2012-38864-C03-03es_ES
dc.identifier.urihttps://hdl.handle.net/10902/34915
dc.description.abstractMeasurements of the polarization-resolved characteristics of a 1550-nm vertical-cavity surface-emitting laser (VCSEL) as a function of the temperature are presented. Type I (from the high-frequency to the low-frequency polarization mode) and Type II (from the low-frequency to the high-frequency polarization mode) polarization switchings (PS) are found in our device. Double PS (Type II followed by Type I and vice versa) are found when increasing the bias current for different device temperatures. Type II polarization switching to the gain disfavored mode is obtained. PS current, nonlinear dichroism, differential gain, and threshold current are measured as a function of the temperature. An expression relating these quantities to the spin-flip rate is derived. Using this expression, we have found large values of the spin-flip rate and its temperature dependence. The spin-flip rate increases with temperature except in a narrow temperature region in which a local minimum is observed. This behavior is mainly determined by the dependence of the inverse of the nonlinear dichroism on the temperature.es_ES
dc.description.sponsorshipThis work was supported in part by the Ministerio de Ciencia e Innovación, Spain, under project TEC2012-38864-C03-03 and cofinanced by FEDER funds.es_ES
dc.format.extent8 p.es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Electrical and Electronics Engineers Inc.es_ES
dc.rights©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.es_ES
dc.sourceIEEE Journal of Selected Topics in Quantum Electronics, 2015, 21(6), 636-642es_ES
dc.subject.otherParameter estimationes_ES
dc.subject.otherPolarization switchinges_ES
dc.subject.otherVertical-cavity surface-emitting lasers (VCSELs)es_ES
dc.titleMeasurement of temperature-dependent polarization parameters in long-wavelength VCSELses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherVersionhttps://doi.org/10.1109/JSTQE.2015.2410260es_ES
dc.rights.accessRightsopenAccesses_ES
dc.identifier.DOI10.1109/JSTQE.2015.2410260
dc.type.versionacceptedVersiones_ES


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