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dc.contributor.authorQuirce Teja, Ana
dc.contributor.authorCuesta Campuzano, José Ramón
dc.contributor.authorValle Gutiérrez, Ángel 
dc.contributor.authorHurtado, Antonio
dc.contributor.authorPesquera Gonzalez, Luis
dc.contributor.authorAdams, Michael J.
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2025-01-08T14:16:48Z
dc.date.available2025-01-08T14:16:48Z
dc.date.issued2012-04
dc.identifier.issn1077-260X
dc.identifier.issn1558-4542
dc.identifier.otherTEC2009- 14581-C02-02es_ES
dc.identifier.urihttps://hdl.handle.net/10902/34895
dc.description.abstractWe have analyzed experimentally the optical power polarization bistability induced in a long-wavelength multitransverse mode vertical-cavity surface-emitting laser (VCSEL) under orthogonal optical injection. Bistability with very wide hysteresis cycles is measured for both the fundamental and the high-order transverse mode of the device. The shape of the associated hysteresis cycle is different for each of the two transverse modes. The power of the parallel polarized high-order (fundamental) transverse mode remains constant (gradually decreases) as the injected power is increased. Both powers suddenly drop to low levels at large values of the injected power. The squared shape measured for the I/O characteristic of the high-order transverse mode is of particular interest for obtaining good quality all-optical inversion and all-optical regeneration for use in optical telecommunication networks.es_ES
dc.description.sponsorshipThis work has been funded in part by the Ministerio de Ciencia e Innovación, Spain, under project TEC2009- 14581-C02-02 and by the the European Commission, under the Programme FP7 Marie Curie Intra-European Fellowships Grant PIEF-GA-2008-219682.es_ES
dc.format.extent7 p.es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Electrical and Electronics Engineers Inc.es_ES
dc.rights© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.es_ES
dc.sourceIEEE Journal on Selected Topics in Quantum Electronics, 2012, 18 (2), 772-778es_ES
dc.subject.otherAll-optical switchinges_ES
dc.subject.otherAll-optical signal processinges_ES
dc.subject.otherOptical bistabilityes_ES
dc.subject.otherPolarization switchinges_ES
dc.subject.otherOptical injectiones_ES
dc.subject.otherInjection lockinges_ES
dc.subject.otherVertical-cavity surface-emitting lasers (VCSELs)es_ES
dc.subject.otherTransverse modeses_ES
dc.titlePolarization bistability induced by orthogonal optical injection in 1550-nm multimode VCSELses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherVersionhttp://doi.org/10.1109/JSTQE.2011.2156385es_ES
dc.rights.accessRightsopenAccesses_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/MICINN//TEC2009-14581-C02-02/ES/Laseres De Semiconductor Avanzados Para Procesado Todo-Optico De Señal Y Generacion De Pulsos Cortos/es_ES
dc.identifier.DOI10.1109/JSTQE.2011.2156385
dc.type.versionacceptedVersiones_ES


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