Polarization bistability induced by orthogonal optical injection in 1550-nm multimode VCSELs

Quirce Teja, Ana; Cuesta Campuzano, José Ramón; Valle Gutiérrez, Ángel; Hurtado, Antonio; Pesquera Gonzalez, Luis; Adams, Michael J.

doi:10.1109/JSTQE.2011.2156385

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Identificadores

URI: https://hdl.handle.net/10902/34895

DOI: 10.1109/JSTQE.2011.2156385

ISSN: 1077-260X

ISSN: 1558-4542

Fecha

2012-04

Derechos

© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Publicado en

IEEE Journal on Selected Topics in Quantum Electronics, 2012, 18 (2), 772-778

Editorial

Institute of Electrical and Electronics Engineers Inc.

Enlace a la publicación

http://doi.org/10.1109/JSTQE.2011.2156385

Palabras clave

All-optical switching

All-optical signal processing

Optical bistability

Polarization switching

Optical injection

Injection locking

Vertical-cavity surface-emitting lasers (VCSELs)

Transverse modes

Resumen/Abstract

We have analyzed experimentally the optical power polarization bistability induced in a long-wavelength multitransverse mode vertical-cavity surface-emitting laser (VCSEL) under orthogonal optical injection. Bistability with very wide hysteresis cycles is measured for both the fundamental and the high-order transverse mode of the device. The shape of the associated hysteresis cycle is different for each of the two transverse modes. The power of the parallel polarized high-order (fundamental) transverse mode remains constant (gradually decreases) as the injected power is increased. Both powers suddenly drop to low levels at large values of the injected power. The squared shape measured for the I/O characteristic of the high-order transverse mode is of particular interest for obtaining good quality all-optical inversion and all-optical regeneration for use in optical telecommunication networks.