| dc.contributor.author | Malaver, Emigdio | |
| dc.contributor.author | García García, José Ángel | |
| dc.contributor.author | Tazón Puente, Antonio | |
| dc.contributor.author | Mediavilla Sánchez, Ángel | |
| dc.contributor.other | Universidad de Cantabria | es_ES |
| dc.date.accessioned | 2013-10-01T13:19:02Z | |
| dc.date.available | 2013-10-01T13:19:02Z | |
| dc.date.issued | 2003-09 | |
| dc.identifier.uri | http://hdl.handle.net/10902/3477 | |
| dc.description.abstract | In this paper, a complete characterization of the linearity sweet-spot evolution in MESFET/HEMT devices is presented. A global experimental extraction of the Ids(Vgs, Vds) Taylor series coefficients is used to introduce the small-signal behavior in the linear and saturated regions. The possibilities of taking advantage of these points in highly linear applications is also discussed. A description of the influence of both bias voltages on the device transition from small- towards large- signal regime is presented. Finally, a technique for improving the linearity-efficiency tradeoff in a class B/C power amplifier (PA) is introduced. | es_ES |
| dc.format.extent | 4 p. | es_ES |
| dc.language.iso | spa | es_ES |
| dc.rights | © 2003 URSI España | es_ES |
| dc.source | URSI 2003, XVIII Simposium Nacional de la Unión Científica Internacional de Radio, La Coruña | es_ES |
| dc.title | Regiones de baja distorsión de intermodulación en dispositivos FET: descripción y aplicaciones | es_ES |
| dc.type | info:eu-repo/semantics/conferenceObject | es_ES |
| dc.rights.accessRights | openAccess | es_ES |
| dc.type.version | publishedVersion | es_ES |
