| dc.contributor.author | Rafael Valdivia, Guillermo | |
| dc.contributor.author | Rodríguez Téllez, José | |
| dc.contributor.author | Tazón Puente, Antonio | |
| dc.contributor.author | Fernández Ibáñez, Tomás | |
| dc.contributor.author | Mediavilla Sánchez, Ángel | |
| dc.contributor.other | Universidad de Cantabria | es_ES |
| dc.date.accessioned | 2013-09-30T08:30:17Z | |
| dc.date.available | 2013-09-30T08:30:17Z | |
| dc.date.issued | 2003-09 | |
| dc.identifier.uri | http://hdl.handle.net/10902/3452 | |
| dc.description.abstract | In a previous work the observed differences
between the static and dynamic V-I characteristics of
MESFETs and HEMTs were attributed to electric field
and frequency effects that could be accounted for via the
mobility figure for the device. In this paper we continue
with this work by exploring in more detail the
relationship between the electric field and frequency
conditions on the mobility value using a HEMT device.
We believe that the original multi-bias mobility
measurements described in this paper can be applied
equally successfully to the MESFET device. | es_ES |
| dc.format.extent | 4 p. | es_ES |
| dc.language.iso | spa | es_ES |
| dc.rights | © 2003 URSI España | es_ES |
| dc.source | URSI 2003, XVIII Simposium Nacional de la Unión Científica Internacional de Radio, La Coruña | es_ES |
| dc.title | Movilidad respecto al campo eléctrico y la frecuencia en dispositivos MESFET/HEMT | es_ES |
| dc.type | info:eu-repo/semantics/conferenceObject | es_ES |
| dc.rights.accessRights | openAccess | es_ES |
| dc.type.version | publishedVersion | es_ES |
