Movilidad respecto al campo eléctrico y la frecuencia en dispositivos MESFET/HEMT

Abstract

In a previous work the observed differences between the static and dynamic V-I characteristics of MESFETs and HEMTs were attributed to electric field and frequency effects that could be accounted for via the mobility figure for the device. In this paper we continue with this work by exploring in more detail the relationship between the electric field and frequency conditions on the mobility value using a HEMT device. We believe that the original multi-bias mobility measurements described in this paper can be applied equally successfully to the MESFET device.