| dc.contributor.author | Zamanillo Sainz de la Maza, José María | |
| dc.contributor.author | Ingelmo Gallego, Hilda | |
| dc.contributor.author | Toyos Lanza, Raúl | |
| dc.contributor.author | Pérez Vega, Constantino | |
| dc.contributor.author | Mediavilla Sánchez, Ángel | |
| dc.contributor.other | Universidad de Cantabria | es_ES |
| dc.date.accessioned | 2013-09-24T15:20:16Z | |
| dc.date.available | 2013-09-24T15:20:16Z | |
| dc.date.issued | 2004-09 | |
| dc.identifier.uri | http://hdl.handle.net/10902/3412 | |
| dc.description.abstract | As an extension of our previous works in the
electrical modelling of microwave, this paper shows the
result of the research on large signal behaviour (DC I/V
curves) of AlGaAs P-HEMT (pseudomorphic high
electron mobility transistor) devices, in the overall I/V
plane, and how is possible to include the model into the
PSPICE simulator. Experimental results show very good
agreement with the theoretical analysis. | es_ES |
| dc.format.extent | 4 p. | es_ES |
| dc.language.iso | spa | es_ES |
| dc.rights | © 2004 URSI España | es_ES |
| dc.source | URSI 2004, XIX Simposium Nacional de la Unión Científica Internacional de Radio, Barcelona | es_ES |
| dc.title | Modelado de transistores PHEMT de microondas en SPICE | es_ES |
| dc.type | info:eu-repo/semantics/conferenceObject | es_ES |
| dc.rights.accessRights | openAccess | es_ES |
| dc.type.version | publishedVersion | es_ES |
