Modelado de transistores PHEMT de microondas en SPICE

Ver/Abrir
Identificadores
URI: http://hdl.handle.net/10902/3412
Compartir
Estadísticas
Ver Estadísticas
Google Scholar
Registro completo
Mostrar el registro completo DC
Autoría
Zamanillo Sainz de la Maza, José MaríaAutoridad Unican; Ingelmo Gallego, Hilda; Toyos Lanza, Raúl; Pérez Vega, Constantino; Mediavilla Sánchez, ÁngelAutoridad Unican
Fecha
2004-09
Derechos
© 2004 URSI España
Publicado en
URSI 2004, XIX Simposium Nacional de la Unión Científica Internacional de Radio, Barcelona
Resumen/Abstract
As an extension of our previous works in the electrical modelling of microwave, this paper shows the result of the research on large signal behaviour (DC I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) devices, in the overall I/V plane, and how is possible to include the model into the PSPICE simulator. Experimental results show very good agreement with the theoretical analysis.
Colecciones a las que pertenece