Medida de la movilidad electrónica en dispositivos GaAs: dependencia con la polarización y la frecuencia

Abstract

In this paper we present a new method to evaluate mobility in GaAs devices as well as its dependence on frequency and bias point. Starting from the relationship between the high order derivative of the device drain current source, gmd, and the mobility two alternative measurement methods to obtain this parameter versus both bias conditions and frequency will be presented. At last, the experimental obtained results will show the validity of the presented approach.