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dc.contributor.authorJato Llano, Yolanda 
dc.contributor.authorHerrera Guardado, Amparo 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-09-23T12:45:18Z
dc.date.available2013-09-23T12:45:18Z
dc.date.issued2005-09
dc.identifier.urihttp://hdl.handle.net/10902/3372
dc.description.abstractThis paper presents the design, simulations and measurements of a fully integrated low noise amplifier (LNA) for Ultra-Wideband applications. The circuit has been implemented in a 0.4 μm silicon-germanium (SiGe:C) bipolar technology which features a 46 GHz cut-off frequency. The LNA exhibits in simulation a flat gain of 23 dB from 3 to 9 GHz and shows a noise figure lower than 5 dB over the whole band. The feedback Darlington configuration allow to obtain good return losses without any matching network. The output 1 dB compression point is below –5 dBm within the band of interest. The UWB input signal is correctly amplified by the LNA and the output spectrum meet the restrictive PART 15 mask of the FCC.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2005 URSI Españaes_ES
dc.sourceURSI 2005, XX Simposium Nacional de la Unión Científica Internacional de Radio, Gandíaes_ES
dc.titleLNA de bajo coste para aplicaciones de banda Ultra-anchaes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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