| dc.contributor.author | Zamanillo Sainz de la Maza, José María | |
| dc.contributor.author | Ingelmo Gallego, Hilda | |
| dc.contributor.author | Pérez Vega, Constantino | |
| dc.contributor.author | Mediavilla Sánchez, Ángel | |
| dc.contributor.other | Universidad de Cantabria | es_ES |
| dc.date.accessioned | 2013-09-23T12:39:02Z | |
| dc.date.available | 2013-09-23T12:39:02Z | |
| dc.date.issued | 2005-09 | |
| dc.identifier.uri | http://hdl.handle.net/10902/3368 | |
| dc.description.abstract | As an enhancement of our previous works in the
electrical modelling of microwave and optical-microwave
interaction field, this paper shows the result of the
research on large signal behaviour (DC I/V curves) of
AlGaAs P-HEMT (pseudomorphic high electron mobility
transistor) and MESFET devices, in the overall I/V plane,
when the incident optical input power is changed and how
is possible to include the model into the PSPICE simulator.
Experimental results show very good agreement with the
theoretical analysis. | es_ES |
| dc.format.extent | 4 p. | es_ES |
| dc.language.iso | spa | es_ES |
| dc.rights | © 2005 URSI España | es_ES |
| dc.source | URSI 2005, XX Simposium Nacional de la Unión Científica Internacional de Radio, Gandía | es_ES |
| dc.title | Modelado electro-óptico de transistores MESFET y P-HEMT en SPICE | es_ES |
| dc.type | info:eu-repo/semantics/conferenceObject | es_ES |
| dc.rights.accessRights | openAccess | es_ES |
| dc.type.version | publishedVersion | es_ES |
