Modelado electro-óptico de transistores MESFET y P-HEMT en SPICE

Abstract

As an enhancement of our previous works in the electrical modelling of microwave and optical-microwave interaction field, this paper shows the result of the research on large signal behaviour (DC I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) and MESFET devices, in the overall I/V plane, when the incident optical input power is changed and how is possible to include the model into the PSPICE simulator. Experimental results show very good agreement with the theoretical analysis.