Diseño y caracterización de un conmutador de antena a 5 GHz en tecnología MMIC

Abstract

This paper reports the design of an MMIC T/R switch operating at 5.25 GHz. The design is based on a series– parallel configuration with switching FETs in cut-off state in T mode being replaced by LC resonators, so that all FETs are in saturation during transmission as a means to improve the linearity of the switch while driven by a high power at the transmission port. An MMIC circuit has been implemented in the OMMIC foundry using HEMTs of the ED02AH process. The switch has an area of 0.6£1.3 mm2 and has been widely characterized using precise microwave equipment. Experimental results agree with simulation data predicted with ADS and show that performance is within the state-of-the-art in MMIC switches for mobile handsets, both in terms of linearity, bandwidth, output power, isolation and insertion losses.