Caracterización de las no linealidades Igs(Vgs) e Ids(Vgs) para la descripción de la distorsión en régimen gran señal

Abstract

In this paper, an experimental procedure is proposed for extracting the coefficients of the Igs(Vgs) and Ids(Vgs) Taylor-series expansions along a desired load line. Based on the nonlinear current method, both FET nonlinearities may be accurately characterized from the sub-threshold zone up to deep input junction conduction, allowing an accurate description of their relative role on amplifier large-signal intermodulation distortion (IMD). Measurement results are finally presented for a typical PHEMT device.