Incorporación de transistores lineales de efecto campo en simuladores electromagnéticos basados en el método FDTD

Abstract

The two-port (TP) lumped-network (LN) finite-difference time-domain (FDTD) technique is an extension of the LN-FDTD method that permits linear TP LN to be implemented in a systematic way into the FDTD framework. In this paper, the TP-LN-FDTD method is applied to modeling linear field-effect transistors (FETs). To this end, the exponential factor associated to the transconductance delay parameter is fitted by a rational function. This is done by using the Cauchy Method. Also an efficient strategy is developed to account for the extrinsic parameters of the FET. For validation purposes, the scattering parameters of a HJFET amplifier have been computed and compared with those obtained by the electromagnetic simulator Agilent-HFSS used in combination with the circuital simulator ADS, and with the results provided by ADS alone.