Medida dinámica de la transconductancia a temperaturas criogénicas en transistores E-pHEMT

Abstract

This paper shows the transconductance behaviour of an Enhancement pseudomorphic High Electron Mobility Transistor (E-pHEMT) when it is cooled to cryogenic temperatures. DC and RF transconductance values, as well as I/V curves, are extracted using pulsed measurement techniques from the device under test which is placed inside a Hellium closed-cycle cryostat cooled down to 10 K. An increase in transconductance values, which can help to predict an amplifier oscillation, and a shift in threshold voltage (VT) are shown. The obtained results allow a more accurate design of amplifiers, as well as to serve as a starting point for transistor modelling, under cryogenic operation.