Oscilador sintetizado a 5.2 GHz en tecnología SiGe de 0.4μm

Abstract

The implementation of a synthesized oscillator in the 5150-5250 MHz band, in 0.4μm BiCMOS technology, is described in this paper. Since this circuit is intended to be used in a direct conversion receiver, its VCO operates at double frequency so that known adverse phenomena, such as frequency pulling and LO leakage, are minimized. The static programmable frequency divider combines both CML and CMOS logic families, and allows the use of two possible carriers, 5175 and 5225 MHz. Phase margin stays above 70º for any frequency within the VCO tuning range. The overall power dissipation is below 104.3mW, and the surface occupied by the circuit -excluding pads- is about 0.367mm².