Extracción y validación de un modelo no-lineal para un dispositivo HEMT de GaN

Abstract

In this contribution a non-linear model for a GaN 8x50 μm monolithic HEMT is described. Practical issues on model selection and parameter extraction procedure are assessed. The model has been validated by comparing measured and simulated results (up to 20 GHz) under large signal regime for a 4 GHz source. Once the simulation capability is confirmed the model is used to explore the possibilities of using the device in high-linear power amplifier applications such as WiMAX transmitter front-ends. Simulated results show that this device could be employed for such applications.