Extracción y dependencia con la polarización del modelo de pequeña señal de dispositivos HEMT de enriquecimiento

Abstract

This paper describes a step by step method for the small signal circuit model extraction of an Enhancement-mode pseudomorphic High Electron Mobility Transistor (E-pHEMT). This method is based on the “cold-FET” technique, modified to be used with enhancement-mode transistors. The technique applied, fully based on S-parameters measurements, permits to obtain the fifteen elements model, which fits the measured S-parameters in an accurate way through the bandwidth of operation of the transistor. Different plots of the intrinsic parameters are presented showing their bias dependence, which is found to be very similar to depletion mode devices.