Load-invariant double class-E/F2 resonant topology for UHF DC-DC power conversion

Vegas Bayer, David; Pérez Cisneros, José Ramón; Ruiz Lavín, María de las Nieves; Oti Isla, María; García García, José Ángel

doi:10.1109/INMMIC57329.2023.10321766

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LoadInvariantDouble.pdf (437.9Kb)

Identificadores

URI: https://hdl.handle.net/10902/32311

DOI: 10.1109/INMMIC57329.2023.10321766

ISBN: 979-8-3503-2242-2

Fecha

2023

Derechos

© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Publicado en

International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Aveiro, Portugal, 2023

Editorial

Institute of Electrical and Electronics Engineers, Inc.

Enlace a la publicación

https://doi.org/10.1109/INMMIC57329.2023.10321766

Palabras clave

Class-E

Dc-dc converter

GaN HEMT

UHF

Resumen/Abstract

This work addresses the design of a double class-E/F2 resonant power converter operating under a varying dc load at UHF band. Based on a RF GaN HEMT, the performance of a class-E/F2 power amplifier (PA) is compared through simulations with the one from a class-E PA using the same transistor. The efficiency enhancement potential offered by a second harmonic termination typical of class-F-1 PAs, associated to a reduction of the transistor conduction losses, is however degraded by the losses in the passive elements due to the need for a more complex network interconnecting the inverting and rectifying parts of the converter. Measured efficiency results include a peak value of 75% and a profile above 60% for dc output power levels up to a 35% of the peak or nominal value (13.4 W).

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