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dc.contributor.authorCano de Diego, Juan Luis 
dc.contributor.authorFuente Rodríguez, Luisa María de la 
dc.contributor.authorArtal Latorre, Eduardo 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-09-12T10:49:25Z
dc.date.available2013-09-12T10:49:25Z
dc.date.issued2012-09
dc.identifier.urihttp://hdl.handle.net/10902/3217
dc.description.abstractThis paper describes a broad-band amplifier with very low noise for the 26-36 GHz frequency range. The amplifier consists of a previously designed monolithic (MMIC) amplifier using a 100nm mHEMT process and a high performance discrete transistor placed in front of it, so that the overall noise is reduced while the gain is increased if compared with the MMIC. The transistor was manufactured using a 50 nm mHEMT process. At room temperature the average gain is 35.2 dB and a noise figure of 1.76 dB. When cooled to 16K, the average noise temperature is 19.1K with an associated gain of 39.4 dB and a DC power consumption of only 15.7 mW.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2012 URSI Españaes_ES
dc.sourceURSI 2012, XXVII Simposium Nacional de la Unión Científica Internacional de Radio, Elchees_ES
dc.titleAmplificador de bajo ruido basado en tecnología mHEMT para receptores de radio astronomíaes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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