Amplificador de bajo ruido basado en tecnología mHEMT para receptores de radio astronomía

Abstract

This paper describes a broad-band amplifier with very low noise for the 26-36 GHz frequency range. The amplifier consists of a previously designed monolithic (MMIC) amplifier using a 100nm mHEMT process and a high performance discrete transistor placed in front of it, so that the overall noise is reduced while the gain is increased if compared with the MMIC. The transistor was manufactured using a 50 nm mHEMT process. At room temperature the average gain is 35.2 dB and a noise figure of 1.76 dB. When cooled to 16K, the average noise temperature is 19.1K with an associated gain of 39.4 dB and a DC power consumption of only 15.7 mW.