Caracterización de diodos Schottky para banda W

Abstract

In this paper, a comparison between two different techniques: low-frequency (1 MHz) and microwave frequency up to 10 GHz measurements, is presented in order to obtain the apparent capacitance of Single Anode Schottky Diodes fabricated by the University of Virginia. Moreover, W-band S-parameters measurements have been performed and presented in this work. All measurements are done to obtain a complete large signal equivalent circuit model suitable for the device under consideration.