Análisis de los efectos dispersivos en baja frecuencia de transistores HEMT a través de medidas de capacidad y conductancia

Abstract

The analysis of low-frequency dispersive effects on semiconductors devices is a significant issue in order to characterize trapping states. This contribution shows a measurement set-up to test the gate-source capacitance and conductance of devices to study their frequency and bias dependence. Preliminary studies on trap characterization of High Electron Mobility Transistors (HEMT) are reported. The measurement set-up was performed assuming models in which the traps are present at the interface of the semiconductor heterojunction. The time constant and density of traps have been determined from measured data. The device under test has been also integrated into a cryogenic cycle where trap states becomes more significant.