Dispositivos de conmutación en criogenia para conmutadores de fase 180º

Abstract

This work is focused on the analysis of cryogenic performance of diodes, for their use as switching devices in a wideband 180º phase switch circuit. Two kind of diodes, both with low equivalent series resistance and low capacitance, are characterized: a silicon p-i-n diode HPND-4005 and a gallium arsenide Schottky diode MA4E2037. The 180º phase switch is designed in hybrid technology working in the Ka-band. Their behaviour is described at room temperature and at cryogenics (15 K). Both diodes are assembled in the phase switch and cryogenic performance is described, showing a broadband response (more than 40% of relative bandwidth at 30 GHz) with low insertion loss for an error in phase of less than 2º.