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dc.contributor.authorZeljami, Kaoutar
dc.contributor.authorGutiérrez Asueta, Jéssica 
dc.contributor.authorPascual Gutiérrez, Juan Pablo 
dc.contributor.authorFernández Ibáñez, Tomás 
dc.contributor.authorTazón Puente, Antonio 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-09-10T07:11:52Z
dc.date.available2013-09-10T07:11:52Z
dc.date.issued2011-09
dc.identifier.urihttp://hdl.handle.net/10902/3174
dc.description.abstractCharacterization and modelling of devices, in particular diodes, in W band becomes a complex task due to the difficulties to de-embed parasitic effects of the access elements. We present a CAD model developed for two CPW-Microstrip transitions connected with a bond wire. It will be used to deembed device measurements from empirical data results when using a commercial calibration substrate with measurement reference planes at the probe tips, which not includes CPW to microstrip transitions in the standards neither wire bonds. The Interface Model has been verified by comparing measurements and two types of simulations (3D EM and circuital physicallybased) of the CPW_Micorstrip- bond_wire-CPW_Microstrip.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2011 URSI Españaes_ES
dc.sourceURSI 2011, XXVI Simposium Nacional de la Unión Científica Internacional de Radio, Leganéses_ES
dc.titleCaracterización de transiciones coplanar-Microstrip en banda Wes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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