Modelado no lineal de los efectos dispersivos en los transistores HEMT de GaN

Abstract

Traps (due to the presence of surface-state densities and deep-levels) and self-heating (due to the power dissipation in the device) cause important deviation between DC and dynamic I/V characteristics that limits the output power of the device at high frequencies, and they must be taken into account when an accurate nonlinear dynamic model is needed. In this paper, a new approach to adding traps and self-heating effects into an existing DC classical nonlinear Ids current source model for GaN HEMT device is presented. The resulting model is able to provide accurate simulation of both, static (DC) and dynamic (Pulsed) current-voltage (I/V) characteristics at any operating bias point simultaneously. Self-heating is added to the model without the need of any additional electro-thermal sub-circuit. Parameters extraction strategy and the model implementation in a CAD simulator are simple. The very good agreement between simulation and experimental results demonstrates the accuracy of the approach.