Modelado de diodos Schottky para aplicaciones a frecuencias de terahercios

Abstract

Schottky diodes fabricated by the University of Virginia in USA have been subject of intense recent investigation and have emerged as attractive candidates at THz frequencies. Single Schottky diodes have junctions with extremely low junction capacitance, and low series resistance which makes them extremely well-suited for commutating mixer circuits in which ideal switching behaviour is highly desirable. Schottky diodes also offer lower forward voltage compared to an otherwise equivalent p-n junction diode. This permits Schottky diodes to detect lower amplitude signals than a p-n junction. In this paper we describe a procedure to extract the parameters of a high performance THz Schottky diode. Model extraction is done using a combination of dc and small-signal RF measurements. The results show that the proposed method is suitable to determine parameters of diode model with the excellent fit between measured and calculated I-V DC and S-parameter.