Estudio y caracterización del efecto kink en transistores HEMT de GaN

Abstract

Using as test vehicles virgin and aged GaN HEMT devices, a study of the kink effect evolution with the applied electric field and ambient temperature has been performed. The obtained results lead to a physics explanation of the kink effect origin as well as its dependence on ambient temperature. Experimental results, showing the different effects taking place in the transistor, will be reported for several GaN devices operating at different electric field and temperature conditions.