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dc.contributor.authorAja Abelán, Beatriz 
dc.contributor.authorVilla Benito, Enrique 
dc.contributor.authorFuente Rodríguez, Luisa María de la 
dc.contributor.authorArtal Latorre, Eduardo 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-09-04T14:15:59Z
dc.date.available2013-09-04T14:15:59Z
dc.date.issued2010-09
dc.identifier.urihttp://hdl.handle.net/10902/3096
dc.description.abstractThis work is focused on the investigation of squarelaw Schottky diode detector. The design and results of a microwave detector, based on planar GaAs and silicon diodes with low effective Schottky barrier height are reported. The manufactured circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band. A good performance has been achieved when it works as a zero-bias Schottky diode detector with a sensitivity of 1000 mV/mW in a 32% bandwidth at 31 GHz.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2010 URSI Españaes_ES
dc.sourceURSI 2010, XXV Simposium Nacional de la Unión Científica Internacional de Radio, Bilbaoes_ES
dc.titleDetector cuadrático con diodo Schottky de 26 a 36 GHzes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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