On a drift-diffusion system for semiconductor devices

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URI: https://hdl.handle.net/10902/30393
ISSN: 1424-0637
ISSN: 1424-0661
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Autoría
Granero Belinchón, RafaelAutoridad Unican
Fecha
2016
Derechos
© 2016. This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature's AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s00023-016-0493-6
Publicado en
Annales Henri Poincaré, 2016, 17, 3473-3498
Editorial
Springer
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Resumen/Abstract
In this note, we study a fractional Poisson–Nernst–Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion as t->∞
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