Distorsión no lineal en un transmisor polar debida a la característica Ron(VDD) del dispositivo GaN HEMT

Abstract

In this paper, the possible impact of RF switching device ON resistance variation with drain supply voltage, Ron(VDD) characteristic, on polar transmitter distortion is considered. Using Pulsed I/V measurement results over a 15 W GaN HEMT, the deviation in the Vdd-to-AM modulation profile is estimated. System-level calculations, in the presence of gateto- drain capacitance contribution to carrier feedthrough, allow the evaluation of the secondary role of this dispersion effect.