Diseño de un amplificador MHEMT de media potencia a 94-100 GHz

Abstract

In this paper we describe the design of a three-stage Medium Power Amplifier (MPA) MMIC operating in a band between 94 and 100 GHz. The amplifier circuit is based on a microstrip lines design with 0.13 μm gate length Metamorphic High Electron Mobility Transistors. The simulated amplifier exhibited a small-signal gain of 14.2 dB and a saturated output power of 19.5 dBm at 97 GHz with a total gate width of 0.32 mm in the output stage. The chip dimensions are 1.6 x 3.1 mm.