Desarrollo de un modelo no-lineal para HEMT de GaN incluyendo efectos térmicos

Abstract

In this contribution the procedure to obtain a user-defined model for a commercial GaN HEMT (CGH35015 manufactured by Cree) is described. The developed model includes device thermal effects caused by power dissipation. Due to the lack of a complete set of device measurements, both pulsed I-V measurements and the simulated device performance obtained by using the model provided by the manufacturer have been employed. The result is an open model implemented in a commercial CAD tool (AWR Design Environment) that can be fully adjusted by the user and provides small, large-signal and self-heating phenomena simulation.