Caracterización en DC de transistores HEMT de GaN

Abstract

AlGaN/GaN HEMT’s exhibit very promising properties for high frequency applications where high power generation is necessary. As for former devices (GaAs MESFET, etc), good models are required to predict the different figures of merit at the design stage. In this sense purpose, this paper presents a procedure to extract the parameters of the rectifying Schottky junction along with a method to obtain the values of the parasitic resistances in GaN, HEMT’s. Virgin and aged devices are considered in the performed measurements to take into account the thermal stress influence in the device behavior. The obtained results will show the validity of the different presented approaches, being the same consistent with the presented in other referenced works.