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dc.contributor.authorRodríguez Iglesias, Guillermo
dc.contributor.authorSaiz Gutiérrez, Antonio
dc.contributor.authorCabria de Juan, Lorena
dc.contributor.authorGarcía García, José Ángel 
dc.contributor.authorPana, Aurel
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-07-18T12:14:11Z
dc.date.available2013-07-18T12:14:11Z
dc.date.issued2009-09
dc.identifier.urihttp://hdl.handle.net/10902/2689
dc.description.abstractIn this paper, a high-voltage LDMOS-based RF pulsed power amplifier is presented. In a secondary radar transponder, the transmitter stage has to modulate the RF reply signal with the coded pulsed data while also amplifying it. Here, this desired behaviour is achieved thanks to the use of high level drain modulation over a novel 50 V LDMOS technology. A 63.24 % DC power efficiency at a 10 W output power level has been measured, with a more than 40 dB ON-OFF ratio under 128 μs and 2% pulse conditions.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 2009 URSI Españaes_ES
dc.sourceURSI 2009, XXIV Simposium Nacional de la Unión Científica Internacional de Radio, Santanderes_ES
dc.titleAmplificador RF pulsado sobre tecnología LDMOS de alta tensiónes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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