Amplificador RF pulsado sobre tecnología LDMOS de alta tensión

Abstract

In this paper, a high-voltage LDMOS-based RF pulsed power amplifier is presented. In a secondary radar transponder, the transmitter stage has to modulate the RF reply signal with the coded pulsed data while also amplifying it. Here, this desired behaviour is achieved thanks to the use of high level drain modulation over a novel 50 V LDMOS technology. A 63.24 % DC power efficiency at a 10 W output power level has been measured, with a more than 40 dB ON-OFF ratio under 128 μs and 2% pulse conditions.