URSI 2008, XXIII Simposium Nacional de la Unión Científica Internacional de Radio, Madrid
This paper describes an accurate approach to modelling the effect of ambient temperature (from -70ºC to +70ºC) on the I/V characteristics of the drain to source Ids current source of Gallium Arsenide (GaAs) MESFET and HEMT transistors under DC and/or pulsed operation. The proposed approach can be applied to any existing DC drain to source current models to increase their accuracy and rang of operation. Starting from a single-current source model, based on the I/V DC and pulsed measurements, a new model allows the user to simulate both DC and large signal behaviour of the device over a range of temperature is presented. This model takes into account all the second order effects (frequency dispersion, self-heating due to the operating point and ambient temperature effect) present in this kind of devices. The accuracy of the proposed approach will validate when comparing the simulation with experimental results.
