URSI 2008, XXIII Simposium Nacional de la Unión Científica Internacional de Radio, Madrid
This paper presents the design and simulation of a monolithic high linearity amplifier in GaAs high electron- mobility transistor technology for the S and UHF bands. A specific topology has been chosen in order to achieve a high OIP3 value as well as good input and output return losses. Due to the wide bandwidth of operation an off-chip matching network has been adopted for each operation band. An on-chip active matching circuit has also been included in order to simplify the passive matching network configuration. A gain of approximately 19 dB has been achieved in simulation, as well as good values of input/output matching. The output third order intermodulation point takes a value of 29.3 dBm in the UHF band and 27.4 dBm in the S-band.
