Efecto de borde en el transistor MESFET GaAs bajo iluminación óptica

dc.contributor.author	Lomer Barboza, Mauro Matías
dc.contributor.author	Navarro Meana, César
dc.contributor.author	Ruiz García, Francisco Javier
dc.contributor.author	Mediavilla Sánchez, Ángel
dc.contributor.author	López Higuera, José Miguel
dc.contributor.author	García García, José Luis
dc.contributor.other	Universidad de Cantabria	es_ES
dc.date.accessioned	2013-06-25T14:38:17Z
dc.date.available	2013-06-25T14:38:17Z
dc.date.issued	1997-09
dc.identifier.uri	http://hdl.handle.net/10902/2506
dc.description.abstract	A photovoltaic gate edge effect in planar GaAs MESFET’s has been developmented whereby a sharp increase in optical gain at the transistor edges occurs, is reported in this document. This optical effect is obtained when the transistor edges are illuminated and enchances the fotosensivity of these devices when they are used as photodetectors.	es_ES
dc.format.extent	3 p.	es_ES
dc.language.iso	spa	es_ES
dc.rights	© 1997 URSI España	es_ES
dc.source	URSI 1997, XII Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao, v. I, p. 37-39	es_ES
dc.title	Efecto de borde en el transistor MESFET GaAs bajo iluminación óptica	es_ES
dc.type	info:eu-repo/semantics/conferenceObject	es_ES
dc.rights.accessRights	openAccess	es_ES
dc.type.version	publishedVersion	es_ES

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