Efecto de borde en el transistor MESFET GaAs bajo iluminación óptica

Abstract

A photovoltaic gate edge effect in planar GaAs MESFET’s has been developmented whereby a sharp increase in optical gain at the transistor edges occurs, is reported in this document. This optical effect is obtained when the transistor edges are illuminated and enchances the fotosensivity of these devices when they are used as photodetectors.