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dc.contributor.authorLomer Barboza, Mauro Matías 
dc.contributor.authorNavarro Meana, César
dc.contributor.authorMediavilla Sánchez, Ángel 
dc.contributor.authorLópez Higuera, José Miguel 
dc.contributor.authorGarcía García, José Luis
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2013-06-19T13:48:21Z
dc.date.available2013-06-19T13:48:21Z
dc.date.issued1996-09
dc.identifier.urihttp://hdl.handle.net/10902/2463
dc.description.abstractThe distinct advantages of optical transmission systems and the increasing use of microwave frequencies within general communication systems, coupled with the ability to integrate microwave and optical components onto a single slice of GaAs have stimulated considerable interest in the development of microwave optoelectronic systems. The optical circuits are advantageous because they can be integrated into the microwave circuits without interfering with them, they have low losses and small dimensions, short reaction time and wide band. This papers present the DC characteristics of a MESFET under different conditions of illumination and different resistances in the gate terminal.es_ES
dc.format.extent4 p.es_ES
dc.language.isospaes_ES
dc.rights© 1996 URSI Españaes_ES
dc.sourceURSI 1996, XI Simposium Nacional de la Unión Científica Internacional de Radio, Madrid, v.I, p. 508-511es_ES
dc.titleControl óptico de dispositivos microondases_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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