Weak localization and electron-electron interaction in the layered compound CuFeTe2
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Rivas-Mendoza, A.; González-Jiménez, F.; Broto, J. M.; Rakotob, H.; González Gómez, Jesús Antonio
Fecha
2011-08Derechos
Attribution-NonCommercial 4.0 International. ©Revista Cubana de Física
Publicado en
Revista cubana de física, 2011, 28(1), p. 14-17
Editorial
Facultad de Física, Universidad de La Habana
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Palabras clave
Localization effects 72.15.Rn
Hopping transport 72.20.Ee
Weak localization 73.20.Fz
Spin-density waves
Resumen/Abstract
The study of the electrical properties of the layered compound CuFeTe2 shows that there are three well differentiated conduction regimes depending on the temperature. Below TSDW ~ 300 K the formation of a Spin Density Wave (SDW) state has been reported, in the frame of a metal to non metal transition. Below 100 K (~ TSDW/3) the behavior of the electrical resistance as a function of temperature and magnetic field is attributable to the still present not condensed electrons (quasi particles) in the SDW state. At low temperatures (1.8 - 20K), low current (< 1 mA) and magnetic eld (0<H <6 Tesla), the effects of weak localization and electronic interactions in two dimensions appear. At intermediate temperatures (20 < T < 100 K) a hopping conductivity behavior is observed.
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