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dc.contributor.authorMillot, Marius
dc.contributor.authorBroto, Jean-Marc
dc.contributor.authorGeorge, Sylvie
dc.contributor.authorGonzález Gómez, Jesús Antonio 
dc.contributor.authorSegura, Alfredo
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2021-07-05T10:30:24Z
dc.date.available2021-07-05T10:30:24Z
dc.date.issued2010
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttp://hdl.handle.net/10902/21951
dc.description.abstractWe report on an investigation of the peculiar electronic structure of the layered semiconductor InSe by magneto-optical experiments under high pressure up to 5 GPa. Magneto-absorption spectroscopy is performed under pulsed magnetic field up to 53 T using a specific setup. Excitonic magnetofingerprints and high-field oscillatory magnetoabsorption yield significant details on the band structure. In addition, the application of an external pressure unveils phenomena that confirm the specific k·p model proposed for this compound on the basis of earlier measurements.es_ES
dc.format.extent10 p.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Physical Societyes_ES
dc.rights© American Physical Societyes_ES
dc.sourcePhysical review. B, 2010, 81, 205211es_ES
dc.titleElectronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressurees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherVersionhttps://doi.org/10.1103/PhysRevB.81.205211es_ES
dc.rights.accessRightsopenAccesses_ES
dc.identifier.DOI10.1103/PhysRevB.81.205211
dc.type.versionpublishedVersiones_ES


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