Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure
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URI: http://hdl.handle.net/10902/21951ISSN: 1098-0121
ISSN: 1550-235X
ISSN: 2469-9950
ISSN: 2469-9969
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Millot, Marius; Broto, Jean-Marc; George, Sylvie; González Gómez, Jesús Antonio
Fecha
2010Derechos
© American Physical Society
Publicado en
Physical review. B, 2010, 81, 205211
Editorial
American Physical Society
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Resumen/Abstract
We report on an investigation of the peculiar electronic structure of the layered semiconductor InSe by magneto-optical experiments under high pressure up to 5 GPa. Magneto-absorption spectroscopy is performed under pulsed magnetic field up to 53 T using a specific setup. Excitonic magnetofingerprints and high-field oscillatory magnetoabsorption yield significant details on the band structure. In addition, the application of an external pressure unveils phenomena that confirm the specific k·p model proposed for this compound on the basis of earlier measurements.
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