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dc.contributor.authorMjema, Charles Alphonce
dc.contributor.authorHaentjens, Benoît
dc.contributor.authorFourn, Erwan
dc.contributor.authorDrissi, M'Hamed
dc.contributor.authorDiego Arroyo, Laura 
dc.contributor.authorHerrera Guardado, Amparo 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2021-02-23T14:26:18Z
dc.date.available2021-02-23T14:26:18Z
dc.date.issued2021
dc.identifier.isbn978-2-87487-060-6
dc.identifier.urihttp://hdl.handle.net/10902/20775
dc.description.abstractIn this paper we present the study and obtained results of a MMIC High Power Amplifier operating in X-band. The device is designed using 250nm GaN HEMT on SiC process. The targeted specifications include pulsed operation from 8 to 10.5GHz. In pulsed mode and 28V of drain voltage, an output power more than 40W with (37-40)% PAE has been achieved throughout the bandwidth, while remarkable 52.4W output power with associated 37% PAE has been recorded at 8.75GHz for a 32V of drain voltage. The HPA stability has been studied by considering the influence of external decoupling components and dedicated testing environment.es_ES
dc.format.extent4 p.es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Electrical and Electronics Engineers, Inc.es_ES
dc.rights© 2020 EuMA (European Microwave Association)es_ES
dc.sourceProceedings of the 15th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, The Netherlands, 2020, 265-268es_ES
dc.subject.otherMMICes_ES
dc.subject.otherGallium Nitride (GaN)es_ES
dc.subject.otherHigh Power Amplifiers (HPA)es_ES
dc.subject.otherX-bandes_ES
dc.subject.otherRadares_ES
dc.titleOver 40W, X-Band GaN on SiC MMIC amplifieres_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.relation.publisherVersionhttps://ieeexplore.ieee.org/document/9337319es_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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