Over 40W, X-Band GaN on SiC MMIC amplifier

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Identificadores
URI: http://hdl.handle.net/10902/20775
ISBN: 978-2-87487-060-6
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Autoría
Mjema, Charles Alphonce; Haentjens, Benoît; Fourn, Erwan; Drissi, M'Hamed; Diego Arroyo, LauraAutoridad Unican; Herrera Guardado, AmparoAutoridad Unican
Fecha
2021
Derechos
© 2020 EuMA (European Microwave Association)
Publicado en
Proceedings of the 15th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, The Netherlands, 2020, 265-268
Editorial
Institute of Electrical and Electronics Engineers, Inc.
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Palabras clave
MMIC
Gallium Nitride (GaN)
High Power Amplifiers (HPA)
X-band
Radar
Resumen/Abstract
In this paper we present the study and obtained results of a MMIC High Power Amplifier operating in X-band. The device is designed using 250nm GaN HEMT on SiC process. The targeted specifications include pulsed operation from 8 to 10.5GHz. In pulsed mode and 28V of drain voltage, an output power more than 40W with (37-40)% PAE has been achieved throughout the bandwidth, while remarkable 52.4W output power with associated 37% PAE has been recorded at 8.75GHz for a 32V of drain voltage. The HPA stability has been studied by considering the influence of external decoupling components and dedicated testing environment.
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