A novel structure of a wideband zero-bias power limiter for ISM band

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Identificadores
URI: http://hdl.handle.net/10902/20695
ISSN: 1693-6930
ISSN: 2087-278X
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Autoría
Echchakhaoui, Khalifa; Abdelmounim, Elhassane; Zbitou, Jamal; Bennis, Hamid; Errkik, Ahmed; Mediavilla Sánchez, ÁngelAutoridad Unican
Fecha
2018-12
Derechos
This is an open access article under the CC BY-SA license
Publicado en
Telkomnika (Telecommunication Computing Electronics and Control), 2018, 16(6), 2481-2491
Editorial
Universitas Ahmad Dahlan, en colaboración con Institute of Advanced Engineering and Science (IAES)
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Palabras clave
Microstrip
Power limiter
Schottky diode
Resumen/Abstract
In this paper, a new broadband microwave microstrip power limiter is designed and realized. The Power Limiter is based on microstrip technology integrating a Zero Bias commercial Schottky diodes HSMS2820.The power limiter is optimized and validated in two steps. The enhanced and achieved circuit is obtained by concatenating two basic structures. The final circuit was validated into simulation by using ADS solver. Finally this circuit was realized and tested. Simulation and measurement results are in a good agreement. The final circuit achieves a limiting rate of 14 dB with a threshold input power level of 0 dBm until a maximum input power level of 30 dBm.
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This is an open access article under the CC BY-SA licenseExcepto si se señala otra cosa, la licencia del ítem se describe como This is an open access article under the CC BY-SA license