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dc.contributor.authorGutiérrez Vela, Yael 
dc.contributor.authorLosurdo, María
dc.contributor.authorGarcía Fernández, Pablo (físico) 
dc.contributor.authorSainz de la Maza, Marta
dc.contributor.authorGonzález, Francisco
dc.contributor.authorBrown, April S.
dc.contributor.authorEveritt, Henry O.
dc.contributor.authorJunquera Quintana, Francisco Javier 
dc.contributor.authorMoreno, Fernando
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2020-03-30T14:04:40Z
dc.date.available2020-03-30T14:04:40Z
dc.date.issued2019-10
dc.identifier.issn2159-3930
dc.identifier.other4JU2864661es_ES
dc.identifier.otherPGC2018-096955-B-C41es_ES
dc.identifier.urihttp://hdl.handle.net/10902/18433
dc.description.abstractIn order to exploit gallium´s (Ga) rich polymorphism in the design of phase-change plasmonic systems, accurate understanding of the dielectric function of the different Ga-phases is crucial. The dielectric dispersion profiles of those phases appearing at atmospheric pressure have been reported in the literature, but there is no information on the dielectric function of the high-pressure Ga-phases. Through first principles calculations we present a comprehensive analysis of the interdependence of the crystal structure, band structure, and dielectric function of two high-pressure Ga phases (Ga(II) and Ga(III)). The plasmonic behavior of these high-pressure Ga-phases is compared to those stable (liquid- and α-Ga) and metastable (β-, γ- and δ-Ga) at atmospherics pressure. This analysis can have important implications in the design of pressure-driven phase-change Ga plasmonic devices and high-pressure SERS substrates.es_ES
dc.description.sponsorshipY.G. and F.M. acknowledges the support by the Army Research Laboratory under Cooperative Agreement Number W911NF-17-2-0023 and by SODERCAN (Sociedad para el Desarrollo de Cantabria) and the Research Vicerrectorate of the University of Cantabria through project 4JU2864661. Y.G. thanks the University of Cantabria for her FPU grant. P.G.-F. and J.J. acknowledge financial support from the Spanish Ministry of Economy and Competitiveness through grant number PGC2018-096955-B-C41.es_ES
dc.format.extent11 p.es_ES
dc.language.isoenges_ES
dc.publisherOSA, Optical Society of Americaes_ES
dc.rights© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreementes_ES
dc.sourceOpt. Mater. Express 9, 4050-4060 (2019)es_ES
dc.titleDielectric function and plasmonic behavior of Ga(II) and Ga(III)es_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherVersionhttps://doi.org/10.1364/OME.9.004050es_ES
dc.rights.accessRightsopenAccesses_ES
dc.type.versionpublishedVersiones_ES


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