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Comparison of microstrip w-band detectors based on zero bias schottky-diodes

dc.contributor.authorGutiérrez Asueta, Jéssica 
dc.contributor.authorZeljami, Kaoutar
dc.contributor.authorPascual Gutiérrez, Juan Pablo 
dc.contributor.authorFernández Ibáñez, Tomás 
dc.contributor.authorTazón Puente, Antonio 
dc.contributor.otherUniversidad de Cantabriaes_ES
dc.date.accessioned2019-12-23T18:08:19Z
dc.date.available2019-12-23T18:08:19Z
dc.date.issued2019-12-01
dc.identifier.issn2079-9292
dc.identifier.otherCSD2008-00068es_ES
dc.identifier.otherTEC2014-58341-C4-1-Res_ES
dc.identifier.otherTEC2017-83343-C4-1-Res_ES
dc.identifier.otherAYA2017-92153-EXPes_ES
dc.identifier.urihttp://hdl.handle.net/10902/17686
dc.description.abstractThis paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed.es_ES
dc.description.sponsorshipThe authors would like to thank the funding of the University of Cantabria Industrial Doctorate programme 2014, project: “Estudio y Desarrollo de Tecnologías para Sistemas de Telecomunicación a Frecuencias Milimétricas y de Terahercios con Aplicación a Sistemas de Imaging en la Banda 90 GHz–100GHz” and the Spanish Ministry of Economy, Science and Innovation for the financial support provided through projects CONSOLIDER-INGENIO CSD2008-00068 (TERASENSE), the continuing excellence network SPATEK and the projects TEC2014-58341-C4-1-R, TEC2017-83343-C4-1-R. and AYA2017-92153-EXP.es_ES
dc.format.extent16 p.es_ES
dc.language.isoenges_ES
dc.publisherMDPIes_ES
dc.rights© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.es_ES
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.sourceElectronics, 2019, 8(12), 1450es_ES
dc.subject.otherW bandes_ES
dc.subject.otherZero Bias Schottky Diodees_ES
dc.subject.otherDetectorses_ES
dc.titleComparison of microstrip w-band detectors based on zero bias schottky-diodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsopenAccesses_ES
dc.identifier.DOI10.3390/electronics8121450
dc.type.versionpublishedVersiones_ES


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© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.Excepto si se señala otra cosa, la licencia del ítem se describe como © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.